Document Number: MMRF1019N Freescale Semiconductor Rev. 0, 7/2014 Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for aerospace and defense applications such as DME, IFF, and L--band radar. Typical Pulse Performance: V =50Vdc,I =10mA, P =10W DD DQ out Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain 25 dB 1090 MHz, 10 W, 50 V Drain Efficiency 69% PULSE Features RF POWER LDMOS TRANSISTOR Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 V Operation DD Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation In Tape and Reel. R4 Suffix = 100 Units, 16 mm Tape Width, 7--inch Reel. PLD--1.5 PLASTIC Gate Drain Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +100 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T -- 65 to +150 C stg Case Operating Temperature T 150 C C Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (1,2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case Z 1.6 C/W JC Case Temperature 79C, 10 W Peak, 100 sec Pulse Width, 20% Duty Cycle 1. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Gate--Source Leakage Current I 10 Adc GSS (V =5 Vdc, V =0 Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (V =0 Vdc, I =7 mA) GS D Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50 Vdc, V =0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V = 100 Vdc, V =0 Vdc) DS GS On Characteristics Gate Threshold Voltage V 1 1.7 2.5 Vdc GS(th) (V =10 Vdc, I =36 Adc) DS D Gate Quiescent Voltage V 1.7 2.4 3.2 Vdc GS(Q) (V =50 Vdc, I = 10 mAdc, Measured in Functional Test) DD D Drain--Source On--Voltage V 0.2 Vdc DS(on) (V =10 Vdc, I =70 mAdc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 0.1 pF rss (V =50 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Output Capacitance C 3.38 pF oss (V =50 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Input Capacitance C 9.55 pF iss (V =50 Vdc, V =0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V =50 Vdc, I =10 mA, P = 10 W Peak (2 W Avg.), f = 1090 MHz, DD DQ out 100 sec Pulse Width, 20% Duty Cycle Power Gain G 23 25 28 dB ps Drain Efficiency 66 69 % D Input Return Loss IRL --12 --8 dB MMRF1019NR4 RF Device Data Freescale Semiconductor, Inc. 2