Product Information

MMRF5014H-500MHZ

Product Image X-ON

Datasheet
RF Development Tools MMRF5014H 500-2500 MHz Reference Circuit

Manufacturer: NXP
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1: USD 2264.6921 ea
Line Total: USD 2264.6921

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Pack Size: 1
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Manufacturer
NXP
Product Category
RF Development Tools
RoHS - XON
Y Icon ROHS
Type
Rf Power Mosfet
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Operating Frequency
1 MHz To 2700 MHz
Output Power
125 W
Package / Case
NI - 360H - 2SB
Technology
Gan Sic
Brand
NXP
Gain
18 Db
Mounting Style
Smd/Smt
Number Of Channels
1 Channel
Transistor Polarity
P - Channel
Id - Continuous Drain Current
350 mA
Pd - Power Dissipation
232 W
Product Type
Rf Mosfet Transistors
Factory Pack Quantity :
1
Subcategory
Mosfets
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Voltage
- 8 V , 0 V
Vgs Th - Gate-Source Threshold Voltage
- 2.3 V
Cnhts
8541290000
Hts Code
8541290095
Mxhts
85412999
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DocumentNumber:MMRF5014H NXPSemiconductors Rev. 3, 05/2018 Technical Data RFPowerGaNTransistor MMRF5014H This125WCWRFpowertransistorisoptimizedforwidebandoperationupto 2700 MHz and includes input matching for extended bandwidth performance. Withits highgainandhighruggedness, this deviceis ideally suitedfor CW, pulseandwidebandRF applications. This part is characterized and performance is guaranteed for applications 12700MHz,125WCW,50V operatinginthe12700MHzband.Thereisnoguaranteeofperformancewhen WIDEBAND this part is used in applications designed outside of these frequencies. RFPOWERGaNTRANSISTOR TypicalNarrowbandPerformance: V =50Vdc,I =350 mA, T =25 C DD DQ A P Frequency G out ps D SignalType (W) (MHz) (dB) (%) (1) 2500 125 CW 16.0 64.2 CW (1) 2500 125 Peak 18.0 66.8 Pulse (100 sec, 20% Duty Cycle) NI--360H--2SB TypicalWidebandPerformance: V =50Vdc,T =25 C DD A (2) (2) P Frequency out G ps D SignalType (W) (MHz) (dB) (%) (3) 2002500 100 CW 12.0 40.0 CW (4) 13001900 CW 125 CW 14.5 45.0 Gate21 Drain LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (Top View) (1) 2500 Pulse >20:1 at 5.0 Peak 50 No Device Note: The backside of the package is the (100 sec, AllPhase (3 dB Degradation source terminalfor the transistor. 20% Duty Cycle) Angles Overdrive) Figure1.PinConnections 1. Measured in 2500 MHz narrowband test circuit. 2. The values shown are the minimum measured performance numbers across the indicated frequency range. 3. Measured in 2002500 MHz broadband reference circuit. 4. Measured in 13001900 MHz broadband reference circuit. Features Advanced GaN on SiC, offering high power density Decade bandwidth performance Low thermal resistance Input matched for extended wideband performance High ruggedness: > 20:1 VSWR TypicalApplications Ideal for military end--use applications, Also suitable for commercial applications, including the following: including the following: Narrowband and multi--octave Public mobile radios, including wideband amplifiers emergency service radios Radar Industrial, scientific and medical Jammers Wideband laboratory amplifiers EMCtesting Wireless cellular infrastructure 2015, 20172018 NXP B.V. MMRF5014H RF Device Data NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 125 Vdc DSS Gate--Source Voltage V 8, 0 Vdc GS Operating Voltage V 0to+50 Vdc DD Maximum Forward Gate Current T =25 C I 18 mA C GMAX Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 55 to +150 C C Operating Junction Temperature Range T 55 to +225 C J (1) Absolute Maximum ChannelTemperature T 350 C MAX TotalDevice Dissipation T =25 C P 232 W C D Derate above 25 C 1.16 W/ C Table2.ThermalCharacteristics Characteristic Symbol Value Unit (2) ThermalResistance by Infrared Measurement, Active Die Surface--to--Case R (IR) 0.86 C/W JC CW: Case Temperature 82 C, 125 W CW, 50 Vdc, I =350 mA, 2500 MHz DQ (3) ThermalResistance by Finite Element Analysis, Channel--to--Case R 1.48 C/W CHC Case Temperature 85C, P =85W (FEA) D ThermalImpedance by Infrared Measurement, Junction--to--Case Z (IR) 0.21 C/W JC Pulse: Case Temperature 58C, 125 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, I =350 mA, 2500 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD22--A114) 1B, passes 500 V Machine Model(per EIA/JESD22--A115) A, passes 100 V Charge Device Model(per JESD22--C101) IV, passes 2000 V Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Drain Leakage Current I 5 mAdc DSS (V =8Vdc,V =10Vdc) GS DS Drain--Source Breakdown Voltage V 150 Vdc (BR)DSS (V =8Vdc,I =25mAdc) GS D OnCharacteristics Gate Threshold Voltage V 3.8 2.9 2.3 Vdc GS(th) (V =10Vdc,I =25mAdc) DS D Gate Quiescent Voltage V 3.2 2.7 2.2 Vdc GS(Q) (V =50Vdc,I =350 mAdc, Measured in FunctionalTest) DS D DynamicCharacteristics Reverse Transfer Capacitance C 1.0 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =4Vdc) DS GS Output Capacitance C 7.7 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =4Vdc) DS GS (4) Input Capacitance C 51.0 pF iss (V =50Vdc,V =4Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Reliability tests were conducted at 225 C. Operation with T at 350 C will reduce median time to failure. MAX 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to

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