DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 1000 V DSS High dv/dt I = 20 A Nanosecond Switching D25 R 0.6 DS(on) Symbol Test Conditions Maximum Ratings P = 1800W DC T = 25C to 150C J V 1000 V DSS T = 25C to 150C R = 1 M V J GS 1000 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C I c 20 A D25 T = 25C, pulse width limited by T I c JM 120 A DM T = 25C c I 20 A AR T = 25C c E 30 mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns DRAIN P 1800 W DC GATE T = 25C c P 730 W DHS Derate 4.4W/C above 25C T = 25C c P 4.5 W DAMB R 0.08 C/W thJC SG1 SG2 SD1 SD2 R 0.20 C/W thJHS Features Isolated Substrate Symbol Test Conditions Characteristic Values T = 25C unless otherwise specified J high isolation voltage (>2500V) excellent thermal transfer min. typ. max. Increased temperature and power cycling capability V = 0 V, I = 3 ma GS D V 1000 V DSS IXYS advanced low Q process g V = V , I = 250 a DS GS D V 3.0 3.6 5.0 V GS(th) Low gate charge and capacitances easier to drive V = 20 V , V = 0 GS DC DS I 100 nA GSS faster switching V = 0.8 V T = 25C DS DSS J I 50 DSS A Low R DS(on) V = 0 T = 125C GS J 1 mA Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other V = 15 V, I = 0.5I R GS D D25 0.6 DS(on) hazardous materials Pulse test, t 300S, duty cycle d 2% Advantages V = 15 V, I = 0.5I , pulse test DS D D25 g 6 9 S fs Optimized for RF and high speed T -55 +150 C J switching at frequencies to 30MHz Easy to mountno insulators needed T 150 C JM High power density T -55 +150 C stg 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 3 g DE475-102N20A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 0.3 G C 6200 pF iss V = 0 V, V = 0.8 V , C GS DS DSS(max) 185 pF oss f = 1 MHz C 44 pF rss Back Metal to any Pin C 46 pF stray T 5 ns d(on) V = 15 V, V = 0.8 V T GS DS DSS 5 ns on I = 0.5 I D DM T R = 0.2 (External) 5 ns d(off) G T 8 ns off Q 145 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 28 nC gs I = 0.5 I D D25 Q 68 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 20 A S Repetitive pulse width limited by T JM I 120 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, Q F S 0.6 RM C V = 100V R I 14 A RM CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at