Product Information

MRF1513NT1

MRF1513NT1 electronic component of NXP

Datasheet
RF MOSFET Transistors RF LDMOS FET PLD1.5

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 4.7628
10 : USD 4.1114
100 : USD 3.6937
500 : USD 3.2603
1000 : USD 2.7956
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 5.616
10 : USD 5.3586
50 : USD 4.9842
100 : USD 4.9257
N/A

Obsolete
0 - Global Stock

MOQ : 1000
Multiples : 1000
1000 : USD 2.6961
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 2.4702
10 : USD 2.39
30 : USD 2.2505
100 : USD 2.1374
102 : USD 2.1374
104 : USD 2.1374
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 6.1658
10 : USD 4.0389
25 : USD 3.8215
100 : USD 3.314
500 : USD 3.2001
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Gate-Source Breakdown Voltage
Product Type
Factory Pack Quantity :
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Document Number: MRF1513N Freescale Semiconductor Rev. 12, 6/2009 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequen- cies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. D Specified Performance 520 MHz, 12.5 Volts Output Power 3 Watts Power Gain 15 dB 520 MHz, 3 W, 12.5 V Efficiency 65% LATERAL N-CHANNEL Capable of Handling 20:1 VSWR, 15.5 Vdc, BROADBAND 520 MHz, 2 dB Overdrive RF POWER MOSFET Features Excellent Thermal Stability G Characterized with Series Equivalent Large-Signal Impedance Parameters N Suffix Indicates Lead-Free Terminations. RoHS Compliant. S In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. CASE 466-03, STYLE 1 PLD-1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +40 Vdc DSS Gate-Source Voltage V 20 Vdc GS Drain Current Continuous I 2 Adc D (1) Total Device Dissipation T = 25C P 31.25 W C D Derate above 25C 0.25 W/C Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 150 C J Table 2. Thermal Characteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 4 C/W JC Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C T T J C 1. Calculated based on the formula P = D R JC 2. MTTF calculator available at Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Current I 1 Adc DSS (V = 40 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 10 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 1.7 2.1 Vdc GS(th) (V = 12.5 Vdc, I = 60 A) DS D Drain-Source On-Voltage V 0.65 Vdc DS(on) (V = 10 Vdc, I = 500 mAdc) GS D Dynamic Characteristics Input Capacitance C 33 pF iss (V = 12.5 Vdc, V = 0, f = 1 MHz) DS GS Output Capacitance C 16.5 pF oss (V = 12.5 Vdc, V = 0, f = 1 MHz) DS GS Reverse Transfer Capacitance C 2.2 pF rss (V = 12.5 Vdc, V = 0, f = 1 MHz) DS GS Functional Tests (In Freescale Test Fixture) Common-Source Amplifier Power Gain G 15 dB ps (V = 12.5 Vdc, P = 3 Watts, I = 50 mA, f = 520 MHz) DD out DQ Drain Efficiency 65 % (V = 12.5 Vdc, P = 3 Watts, I = 50 mA, f = 520 MHz) DD out DQ MRF1513NT1 RF Device Data Freescale Semiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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