DocumentNumber:MRF6V2010N NXPSemiconductors Rev. 6, 9/2016 Technical Data RFPowerFieldEffectTransistors MRF6V2010N N--Channel Enhancement--Mode Lateral MOSFETs MRF6V2010NB Designed primarily for CW large--signal output and driver applications with MRF6V2010GN frequenciesupto450MHz.Devicesareunmatchedandaresuitableforusein industrial, medical and scientific applications. Typical CW performance at 220 MHz: V =50Vdc,I =30mA, DD DQ 10--450MHz,10W,50V P =10W out LATERALN--CHANNEL Power gain 23.9 dB BROADBAND Drain efficiency 62% RFPOWERMOSFETs Capable of handling 10:1 VSWR 50 Vdc, 220 MHz, 10 W CW output power Features TO--270--2 Characterized with series equivalent large--signal impedance parameters PLASTIC Qualified up to a maximum of 50 V operation DD MRF6V2010N Integrated ESD protection 225C capable plastic package TO--272--2 PLASTIC MRF6V2010NB TO--270G--2 PLASTIC MRF6V2010GN 21 Gate Drain (Top View) Note: Exposed backside of the package is the source terminalforthe transistor. Figure1.PinConnections 20072008, 2010, 2016 NXP B.V. MRF6V2010NMRF6V2010NBMRF6V2010GN RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +110 Vdc DSS Gate--Source Voltage V --0.5, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case Case Temperature 81C, 10 W CW R 3.0 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD 22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (I =5mA,V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100 Vdc, V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1 1.68 3 Vdc GS(th) (V =10Vdc,I =28 Adc) DS D Gate Quiescent Voltage V 1.5 2.68 3.5 Vdc GS(Q) (V =50Vdc,I =30 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =70mAdc) GS D DynamicCharacteristics Reverse TransferCapacitance C 0.13 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 7.3 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 16.3 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at