DocumentNumber:MRF8P29300H
FreescaleSemiconductor
Rev. 0, 2/2011
Technical Data
RFPowerFieldEffectTransistors
N--Channel Enhancement--ModeLateral MOSFETs
MRF8P29300HR6
RF Power transistors designedfor applications operating at frequencies
MRF8P29300HSR6
between 2700 and 2900 MHz. These devices are suitable for use in pulsed
applications.
Typical Pulsed Performance: V =30Volts,I = 100 mA
DD DQ
2700--2900MHz,320W,30V
P
f G IRL
out
ps D
LATERALN--CHANNEL
SignalType (W)
(MHz) (dB) (%) (dB)
BROADBAND
Pulsed (100 sec, 320 Peak 2900 13.3 50.5 --17
RFPOWERMOSFETs
10%Duty Cycle)
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak
Power, 300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated P )
out
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matchedfor Easeof Use
Qualified Up to a Maximum of 32 V Operation
CASE375D--05,STYLE1
DD
NI--1230
Integrated ESD Protection
MRF8P29300HR6
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
CASE375E--04,STYLE1
NI--1230S
MRF8P29300HSR6
PARTSAREPUSH--PULL
RF /V31 RF /V
inA GSA outA DSA
Table1.MaximumRatings
Rating Symbol Value Unit
Drain--Source Voltage V --0.5, +65 Vdc RF /V42 RF /V
DSS
inB GSB outB DSB
Gate--Source Voltage V --6.0, +10 Vdc
GS
Storage Temperature Range T --65 to +150 C
stg
(Top View)
Case Operating Temperature T 150 C
C
Figure1.PinConnections
(1,2)
Operating Junction Temperature T 225 C
J
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
ThermalResistance, Junction to Case Z C/W
JC
Case Temperature 61C, 320 W Pulsed, 300 sec Pulse Width, 10%Duty Cycle, 100 mA, 2900 MHz 0.06
Case Temperature 69C, 320 W Pulsed, 500 sec Pulse Width, 20%Duty Cycle, 100 mA, 2900 MHz 0.10
1. Continuous use at maximum temperature willaffect MTTF.
2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics
TestMethodology Class
Human Body Model(perJESD22--A114) 2 (Minimum)
Machine Model(perEIA/JESD22--A115) A (Minimum)
Charge Device Model(perJESD22--C101) IV (Minimum)
Table4.ElectricalCharacteristics (T =25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(1)
OffCharacteristics
Gate--Source Leakage Current I 1 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
Zero Gate Voltage Drain Leakage Current I 1 Adc
DSS
(V =30Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V =65Vdc,V =0Vdc)
DS GS
OnCharacteristics
(1)
Gate Threshold Voltage V 1.0 1.9 2.5 Vdc
GS(th)
(V =10Vdc,I =345 Adc)
DS D
(2)
Gate Quiescent Voltage V 1.5 2.3 3.0 Vdc
GS(Q)
(V =30Vdc,I =100 mAdc, Measured in FunctionalTest)
DD D
(1)
Drain--Source On--Voltage V 0.1 0.18 0.3 Vdc
DS(on)
(V =10Vdc,I =2Adc)
GS D
(1)
DynamicCharacteristics
Reverse TransferCapacitance C 2.53 pF
rss
(V =30Vdc 30 mV(rms)ac @ 1 MHz, V =0Vdc)
DS GS
Output Capacitance C 470 pF
oss
(V =30Vdc 30 mV(rms)ac @ 1 MHz, V =0Vdc)
DS GS
Input Capacitance C 264 pF
iss
(V =30Vdc,V =0Vdc 30 mV(rms)ac @ 1 MHz)
DS GS
(2)
FunctionalTests (In Freescale Test Fixture, 50 ohm system)V =30Vdc,I =100 mA, P =320 W Peak (32 W Avg.),
DD DQ out
f =2900 MHz, 100 sec Pulse Width, 10%Duty Cycle
PowerGain G 12.0 13.3 15.0 dB
ps
Drain Efficiency 47.0 50.5 %
D
Input Return Loss IRL --17 --9 dB
TypicalPulsedRFPerformance(In Freescale 2x3 Compact Test Fixture, 50 ohm system)V =30Vdc,I =100 mA, P =320 W
DD DQ out
Peak (32 W Avg.), 300 sec Pulse Width, 10%Duty Cycle
G IRL
ps D
Frequency (dB) (%) (dB)
2700 MHz 13.9 49.3 --11
2800 MHz 14.0 49.8 --18
2900 MHz 13.0 49.6 --15
1. Each side of device measured separately.
2. Measurement made with device in push--pullconfiguration.
MRF8P29300HR6MRF8P29300HSR6
RF DeviceData
Freescale Semiconductor
2