DocumentNumber:MRF6VP41KH FreescaleSemiconductor Rev. 6, 4/2012 Technical Data RFPowerFieldEffectTransistors MRF6VP41KHR6 N--Channel Enhancement--Mode Lateral MOSFETs MRF6VP41KHSR6 Designed for pulse and CW wideband applications with frequencies up to 500MHz.Devicesareunmatchedandaresuitableforuseinindustrial, medical and scientific applications. 10--500MHz,1000W,50V LATERALN--CHANNEL Typical Pulse Performance at 450 MHz: V =50Volts,I = 150 mA, DD DQ BROADBAND P = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec, out Duty Cycle= 20% RFPOWERMOSFETs Power Gain 20 dB Drain Efficiency 64% Capable of Handling 10:1 VSWR 50 Vdc, 450 MHz, 1000 Watts Peak Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling CASE375D--05,STYLE1 Qualified Up to a Maximum of 50 V Operation DD NI--1230 Integrated ESD Protection MRF6VP41KHR6 Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. For R5 Tape and Reel option, see p. 17. CASE375E--04,STYLE1 NI--1230S MRF6VP41KHSR6 PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (Top View) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +110 Vdc DSS Gate--Source Voltage V --6, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J (3) TotalDevice Dissipation T =25C, CW only P 1333 W C D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalImpedance, Junction to Case Z 0.03 C/W JC Pulse: Case Temperature 80C, 1000 W Peak, 100 sec Pulse Width, 20%Duty Cycle, (3) 450 MHz ThermalResistance, Junction to Case R 0.15 C/W JC CW: Case Temperature 84C, 1000 W CW, 352.2 MHz Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2000 V Machine Model(perEIA/JESD22--A115) A, passes 125 V Charge Device Model(perJESD22--C101) IV, passes 2000 V Table4.ElectricalCharacteristics (T =25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (I =300 mA, V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 100 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 mA DSS (V =100 Vdc, V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1 1.68 3 Vdc GS(th) (V =10Vdc,I =1600 Adc) DS D (5) Gate Quiescent Voltage V 1.5 2.2 3.5 Vdc GS(Q) (V =50Vdc,I =150 mAdc, Measured in FunctionalTest) DD D (4) Drain--Source On--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =4Adc) GS D (4) DynamicCharacteristics Reverse TransferCapacitance C 3.3 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 147 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 506 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS (5) FunctionalTests (In Freescale Test Fixture, 50 ohm system) V =50Vdc,I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 450 MHz, DD DQ out 100 sec Pulse Width, 20% Duty Cycle PowerGain G 19 20 22 dB ps Drain Efficiency 60 64 % D Input Return Loss IRL --18 --9 dB 1. MTTFcalculatoravailable at