Product Information

PBR941B,215

PBR941B,215 electronic component of NXP

Datasheet
NXP Semiconductors RF Bipolar Transistors Single NPN 10V 50mA 360mW 100 9GHz

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.4567
10 : USD 0.3756
100 : USD 0.2294
1000 : USD 0.1902
3000 : USD 0.1802
9000 : USD 0.1714
24000 : USD 0.1613
45000 : USD 0.1575
99000 : USD 0.1525
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B FEATURES PINNING SOT23 Small size PIN DESCRIPTION Low noise 1base Low distortion 2 emitter High gain 3 collector Gold metallization ensures excellent reliability. APPLICATIONS handbook, halfpage 3 Communication and instrumentation systems. DESCRIPTION 12 Silicon NPN transistor in a surface mount 3-pin SOT23 Top view MSB003 package. The transistor is primarily intended for wideband Marking code: LBp applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar Fig.1 Simplified outline (SOT23). detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C feedback capacitance I =0 V =6V f=1MHz 0.3 pF re C CB f transition frequency I =15mA V =6 V f =1GHz 7 9 GHz T C CE m G maximum unilateral power gain I =15mA V =6V 16 dB UM C CE T =25 C f = 1 GHz amb NF noise figure = I =5mA V =6V 1.5 2.5 dB S opt C CE f=1GHz P total power dissipation T =60 C note 1 360 mW tot s R thermal resistance from junction 320 K/W th j-s to soldering point Note 1. T is the temperature at the soldering point of the collector pin. s 2001 Jan 18 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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