Product Information

PBR951,215

PBR951,215 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN UHF 100MA
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0947 ea
Line Total: USD 284.1

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0947
6000 : USD 0.0865
36000 : USD 0.0824

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor 1998 Aug 10 Product specication Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14Philips Semiconductors Product specication UHF wideband transistor PBR951 FEATURES PINNING - SOT23 Small size PIN DESCRIPTION Low noise 1 base Low distortion 2 emitter High gain 3 collector Gold metallization ensures excellent reliability. handbook, halfpage APPLICATIONS 3 3 Communication and instrumentation systems. 1 DESCRIPTION 2 Silicon NPN transistor in a surface mount 3-pin SOT23 1 2 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog Top view MAM255 and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. Marking code: W2. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C feedback capacitance I = 0 V = 6 V f = 1 MHz 0.4 - pF re C CB f transition frequency I = 30 mA V =6V f = 1 GHz 8 - GHz T C CE m G maximum unilateral power gain I = 30 mA V =6V T =25 C 14 - dB UM C CE amb f=1GHz F noise gure = I = 5 mA V =6V 1.3 - dB S opt C CE f=1GHz P total power dissipation T =60 C note 1 - 365 mW tot s R thermal resistance from junction to P = 365 mW - 315 K/W th j-s tot soldering point Note 1. T is the temperature at the soldering point of the collector pin. s 1998 Aug 10 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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