PBR951,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor 1998 Aug 10 Product specication Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14Philips Semiconductors Product specication UHF wideband transistor PBR951 FEATURES PINNING - SOT23 Small size PIN DESCRIPTION Low noise 1 base Low distortion 2 emitter High gain 3 collector Gold metallization ensures excellent reliability. handbook, halfpage APPLICATIONS 3 3 Communication and instrumentation systems. 1 DESCRIPTION 2 Silicon NPN transistor in a surface mount 3-pin SOT23 1 2 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog Top view MAM255 and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. Marking code: W2. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C feedback capacitance I = 0 V = 6 V f = 1 MHz 0.4 - pF re C CB f transition frequency I = 30 mA V =6V f = 1 GHz 8 - GHz T C CE m G maximum unilateral power gain I = 30 mA V =6V T =25 C 14 - dB UM C CE amb f=1GHz F noise gure = I = 5 mA V =6V 1.3 - dB S opt C CE f=1GHz P total power dissipation T =60 C note 1 - 365 mW tot s R thermal resistance from junction to P = 365 mW - 315 K/W th j-s tot soldering point Note 1. T is the temperature at the soldering point of the collector pin. s 1998 Aug 10 2