Product Information

PESD5V0U2BMB,315

PESD5V0U2BMB,315 electronic component of NXP

Datasheet
ESD Suppressors / TVS Diodes ESD Protection Diode Very Low Capacitance
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.095 ea
Line Total: USD 950

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.0854
20000 : USD 0.0842
50000 : USD 0.0783
100000 : USD 0.0747

Read More Specifications

     
Manufacturer
Product Category
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
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Additional Infomation About Product

PESD5V0U2BMB Ultra low capacitance bidirectional double ESD protection array 5 December 2018 Product data sheet 1. General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B (DFN1006B-3) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ESD protection of up to two lines Ultra low diode capacitance: C = 2.9 pF d Ultra low leakage current: I = 5 nA RM AEC-Q101 qualified ESD protection up to 10 kV IEC 61000-4-2 level 4 (ESD) 3. Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics SIM card protection High-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 5 V RWM amb voltage C diode capacitance f = 1 MHz V = 0 V T = 25 C - 2.9 3.5 pF d R ambNexperia PESD5V0U2BMB Ultra low capacitance bidirectional double ESD protection array 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) 1 K1 3 2 K2 cathode (diode 2) CC 2 K2 3 CC common cathode Transparent 006aab331 top view DFN1006B-3 (SOT883B) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0U2BMB DFN1006B-3 plastic, leadless ultra small plastic package 3 solder lands 0.35 SOT883B mm pitch 1.0 mm x 0.6 mm x 0.37 mm body 7. Marking Table 4. Marking codes Type number Marking code PESD5V0U2BMB 0001 1010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PESD5V0U2BMB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 5 December 2018 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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