PHP20N06T,127 NXP

PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T =25C V =10V - - 20.3 A D mb GS see Figure 3 and 1 P total power T =25C see Figure 2 --62 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =25A -6 -nC GD GS D V =44V T =25C DS j see Figure 13 Static characteristics R drain-source V =10V I =10A - - 150 m DSon GS D on-state resistance T =175 C j see Figure 11 and 12 V =10V I =10A - 6475m GS D T =25C j see Figure 11 and 12Nexperia PHP20N06T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP20N06T TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R =20k -55 V DGR GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -14.3 A D GS mb V =10V T =25C see Figure 3 and 1 -20.3 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -81 A DM p mb P total power dissipation T =25C see Figure 2 -62 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 20.3 A S mb I peak source current t 10 s pulsed T =25C - 81 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =11A V 55 V -30.3 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50 unclamped GS energy PHP20N06T 2 Product data sheet Rev. 02 27 November 2009 2 of 12 Nexperia B.V. 2017. All rights reserved