PHP3055E,127 NXP

PHP3055E N-channel TrenchMOS standard level FET Rev. 07 26 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 60 V DS j j I drain current T =25C; V =10V; - - 10.3 A D mb GS see Figure 1 and 3 P total power T = 25 C; see Figure 2 --33 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V; I =10A; -3.2 -nC GD GS D V =44V; T =25C; DS j see Figure 12 Static characteristics R drain-source V =10V; I =5.5A; - 120 150 m DSon GS D on-state resistance T =25C; j see Figure 10 and 11PHP3055E NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base; connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP3055E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB PHP3055E_7 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 26 February 2010 2 of 14