PMN34UN,135 NXP

PMN34UN TrenchMOS ultra low level FET Rev. 01 26 February 2003 Product data M3D302 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PMN34UN in SOT457 (TSOP6). 2. Features TrenchMOS technology Very fast switching Low threshold voltage Surface mount package. 3. Applications Battery-powered motor control Load switch in notebook computers High-speed switch in set top box power supplies Driver FET in DC-to-DC converters. 4. Pinning information Table 1: Pinning - SOT457 (TSOP6), simplied outline and symbol Pin Description Simplied outline Symbol 1,2,5,6 drain (d) d 6 5 4 3 gate (g) 4 source (s) g s MBB076 132 Top view MBK092 SOT457 (TSOP6)PMN34UN Philips Semiconductors TrenchMOS ultra low level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) 25 C T 150 C - 30 V DS j I drain current (DC) T =25 C V = 4.5 V - 4.9 A D sp GS P total power dissipation T =25 C - 1.75 W tot sp T junction temperature - 150 C j R drain-source on-state resistance V = 4.5 V I = 2 A T =25 C 3846m DSon GS D j V = 2.5 V I = 2 A T =25 C 4554m GS D j V = 1.8 V I = 1.5 A T =25 C 5477m GS D j 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 30 V DS j V gate-source voltage (DC) - 8V GS I drain current (DC) T =25 C V = 4.5 V Figure 2 and 3 - 4.9 A D sp GS T =70 C V = 4.5 V Figure 2 - 3.9 A sp GS I peak drain current T =25 C pulsed t 10 s Figure 3 - 19.7 A DM sp p P total power dissipation T =25 C Figure 1 - 1.75 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 1.45 A S sp 9397 750 10979 Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 26 February 2003 2 of 12