Product Information

PMR290XN,115

PMR290XN,115 electronic component of NXP

Datasheet
MOSFET UTRENCHMOS (TM) FET
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1258 ea
Line Total: USD 377.4

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1258
9000 : USD 0.1251

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

PMR290XN N-channel TrenchMOS extremely low level FET M3D173 Rev. 01 3 March 2004 Product data 1. Product prole 1.1 Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 63% smaller than SOT23 Low on-state resistance Low threshold voltage. 1.3 Applications Driver circuits Switching in portable appliances. 1.4 Quick reference data V 20 V I 0.97 A DS D P 0.53 W R 350 m. tot DSon 2. Pinning information Table 1: Pinning - SOT416 (SC-75), simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 s MBB076 Top view MBK090 SOT416 (SC-75) 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMR290XN SC-75 Plastic surface mounted package; 3 leads SOT416PMR290XN Philips Semiconductors TrenchMOS extremely low level FET 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 20 V DS j V drain-gate voltage (DC) 25 C T 150 C; R =20k -20 V DGR j GS V gate-source voltage (DC) - 12 V GS I drain current (DC) T =25 C; V = 4.5 V; Figure 2 and 3 - 0.97 A D sp GS T = 100 C; V = 4.5 V; Figure 2 - 0.61 A sp GS I peak drain current T =25 C; pulsed; t 10 s; Figure 3 - 1.94 A DM sp p P total power dissipation T =25 C; Figure 1 - 0.53 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 0.44 A S sp I peak source (diode forward) current T =25 C; pulsed; t 10 s - 0.88 A SM sp p 9397 750 12663 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 3 March 2004 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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