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PMR670UPE,115

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MOSFET 20V 480 MA P-CH TRENCH MOSFET

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 3000 Multiples : 3000 PMR670UPE,115 NXP	3000 : USD 0.0789 6000 : USD 0.0754 12000 : USD 0.0735	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 PMR670UPE,115 NXP	1 : USD 0.5489 10 : USD 0.3146 100 : USD 0.1351 1000 : USD 0.1012 3000 : USD 0.0783 9000 : USD 0.0693 24000 : USD 0.0658 45000 : USD 0.0575 99000 : USD 0.0547	N/A Obsolete

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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---480mA D GS amb Static characteristics R drain-source on-state V =-4.5V I = -400 mA T = 25 C - 0.67 0.85 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT416

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current - 480 mA - 480 mA
Vds - Drain-Source Breakdown Voltage - 20 V - 20 V
Rds On - Drain-Source Resistance 670 mOhms 670 mOhms
Transistor Polarity P - Channel P - Channel
Vgs - Gate-Source Breakdown Voltage 8 V 8 V
Vgs th - Gate-Source Threshold Voltage - 0.8 V - 0.8 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 300 mW 300 mW
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 416 - 3 SOT - 416 - 3
Packaging Reel Reel
Qg - Gate Charge 0.76 nC 0.76 nC
Configuration Single Single
Brand Nxp Semiconductors Nxp Semiconductors
Forward Transconductance - Min 610 Ms 610 Ms
Fall Time 72 ns 72 ns
Rise Time 30 ns 30 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 80 ns 80 ns