Product Information

PMZB420UN,315

PMZB420UN,315 electronic component of NXP

Datasheet
MOSFET 30V Single N-channel Trench MOSFET
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.043 ea
Line Total: USD 430

0 - Global Stock
MOQ: 10000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 10000
Multiples : 1
10000 : USD 0.043
20000 : USD 0.0428

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

PMZB420UN 30 V, single N-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Low threshold voltage Trench MOSFET technology Ultra thin package profile with 0.37 mm height 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 900 mA D GS amb Static characteristics R drain-source on-state V =4.5 V I = 200 mA T = 25 C - 420 490 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BPMZB420UN NXP Semiconductors 30 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view S 017aaa253 SOT883B (DFN1006B-3) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB420UN DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB420UN 0000 1010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PMZB420UN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 11 May 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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