IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 200 DS Available Repetitive Avalanche Rated R ()V = 5.0 V 0.80 DS(on) GS RoHS* Logic-Level Gate Drive COMPLIANT Q (Max.) (nC) 16 g R Specified at V = 4 V and 5 V DS(on) GS Q (nC) 2.7 gs Fast Switching Q (nC) 9.6 gd Ease of paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRL620PbF Lead (Pb)-free SiHL620-E3 IRL620 SnPb SiHL620 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 10 GS T = 25 C 5.2 C Continuous Drain Current V at 5.0 V I GS D A T = 100 C 3.3 C a Pulsed Drain Current I 21 DM Linear Derating Factor 0.40 W/C b Single Pulse Avalanche Energy E 125 mJ AS a Repetitive Avalanche Current I 5.2 A AR a Repetitive Avalanche Energy E 5.0 mJ AR Maximum Power Dissipation T = 25 C P 50 W C D c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 6.9 mH, R = 25 , I = 5.2 A (see fig. 12c). DD J g AS c. I 5.2 A, dV/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91301 www.vishay.com S11-0519-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRL620, SiHL620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -2.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 -- 100nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 3.1 A -- 0.80 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 2.6 A -- 1.0 GS D b Forward Transconductance g V = 50 V, I = 3.1 A 1.2 - - S fs DS D Dynamic Input Capacitance C - 360 - iss V = 0 V, GS Output Capacitance C -9V = 25 V, 1- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -27- rss Total Gate Charge Q -- 16 g I = 5.2 A, V = 160 V, D DS Gate-Source Charge Q --V = 5.0 V 2.7 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --9.6 gd Turn-On Delay Time t -4.2 - d(on) Rise Time t -31 - r V = 100 V, I = 9.0 A, DD D ns b Turn-Off Delay Time t -1R = 6.0 , R = 11 , see fig. 108- d(off) g D Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.2 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 21 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 5.2 A, V = 0 V -- 1.8 SD J S GS V Body Diode Reverse Recovery Time t - 180 270 ns rr b T = 25 C, I = 5.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.1 1.7 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91301 2 S11-0519-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000