PSMN005-75B,118 NXP

PSMN005-75B N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 16 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications High frequency computer motherboard OR-ing applicationss DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 75 V DS j j I drain current T =25C; V =10V; --75 A D mb GS see Figure 1 and 3 P total power T = 25 C; see Figure 2 - - 230 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V; I =75A; -50 - nC GD GS D V =60V; T =25C; DS j see Figure 11 Static characteristics R drain-source V =10V; I =25A; -4.3 5 m DSon GS D on-state resistance T = 25 C; see Figure 9 and 10 jNXP Semiconductors PSMN005-75B N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D [1] 2D drain 3S source G mb D drain mbb076 S 2 13 SOT404 (D2PAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN005-75B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) PSMN005-75B_1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 16 November 2009 2 of 13