Product Information

PSMN1R7-30YL

PSMN1R7-30YL electronic component of NXP

Datasheet
MOSFET, N CH 30V 100A SOT669
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.806 ea
Line Total: USD 0.81

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.806

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Packaging
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
On State Resistance Max
Operating Temperature Min
Operating Temperature Range
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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Additional Infomation About Product

PSMN1R7-30YL N-channel 30 V 1.7 m logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power convertors density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --109W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A --2.4 m DSon GS D resistance T =100 C see Figure 13 j V =10V I =15A -1.3 1.7 m GS D T =25C j Dynamic characteristics Q gate-drain charge V = 4.5 V I =10A -8.7 -nC GD GS D V = 12 V see Figure 14 DS see Figure 15 LFPAKPSMN1R7-30YL NXP Semiconductors N-channel 30 V 1.7 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 4.5 V I =10A -36.2-nC G(tot) GS D V = 12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --241mJ DS(AL)S GS j(init) drain-source avalanche I = 100 A V 30 V D sup energy R =50 unclamped GS 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R7-30YL LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN1R7-30YL All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 30 May 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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