X-On Electronics has gained recognition as a prominent supplier of PSMN1R8-30BL,118 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN1R8-30BL,118 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN1R8-30BL,118 Nexperia

PSMN1R8-30BL,118 electronic component of Nexperia
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See Product Specifications
Part No.PSMN1R8-30BL,118
Manufacturer: Nexperia
Category:MOSFET
Description: N-Channel 30 V 100A (Tc) 270W (Tc) Surface Mount D2PAK
Datasheet: PSMN1R8-30BL,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 4800
Multiples : 800
4800 : USD 1.2315
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 2.1206
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 2.1206
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 3.9378
10 : USD 2.8251
100 : USD 2.3837
500 : USD 2.1586
800 : USD 1.8675
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PSMN1R8-30BL N-channel 30 V, 1.8 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 - - 270 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25A T =100C - 2.17 2.6 m R DSon GS D j resistance see Figure 13 see Figure 12 V =10V I =25A T =25C - 1.55 1.8 m GS D j see Figure 12 Dynamic characteristics Q gate-drain charge V =4.5 V I =25A V =15V -22 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 83 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25 C I =100 A --1.1 J DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS 1 Continuous current is limited by package.PSMN1R8-30BL Nexperia N-channel 30 V, 1.8 m logic level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R8-30BL D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN1R8-30BL PSMN1R8-30BL PSMN1R8-30BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 22 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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