Product Information

PSMN5R0-80BS

PSMN5R0-80BS electronic component of NXP

Datasheet
MOSFET, N-CH, 80V, 100A, D2PAK

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2453 ea
Line Total: USD 2.25

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 1
Multiples : 1
1 : USD 2.2453
10 : USD 1.9656
25 : USD 1.5422
100 : USD 1.3381
250 : USD 1.1869
500 : USD 1.1038

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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PSMN5R0-80BS N-channel 80 V, 5.1 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 - - 270 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state resistance V =10 V I =25A T = 100 C - 7.19 8.5 m R DSon GS D j see Figure 13 see Figure 12 V =10 V I =25A T =25C - 4.36 5.1 m GS D j see Figure 12 Dynamic characteristics Q gate-drain charge V =10 V I =25A V =40V -21 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 101 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C - - 396 mJ DS(AL)S GS j(init) avalanche energy I =100 A V 80 V R =50 D sup GS unclamped 1 Continuous current is limited by package D2PAKPSMN5R0-80BS NXP Semiconductors N-channel 80 V, 5.1 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-80BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN5R0-80BS PSMN5R0-80BS PSMN5R0-80BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 20 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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