Product Information

PSMN5R0-100ES

PSMN5R0-100ES electronic component of Nexperia

Datasheet
MOSFET, N CH, 100V, 120A, SOT226

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

258: USD 1.2857 ea
Line Total: USD 331.71

0 - Global Stock
MOQ: 258  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

PSMN5R0-100ES
Nexperia

1 : USD 3.3578
10 : USD 2.6572
100 : USD 2.1413
500 : USD 1.8687
1000 : USD 1.7282

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 258
Multiples : 1

Stock Image

PSMN5R0-100ES
Nexperia

258 : USD 1.2857

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Operating Temperature Min
Operating Temperature Range
LoadingGif

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PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 3 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25A -7.7 9 m R DSon GS D resistance T = 100 C see Figure 12 j see Figure 13 2 V =10V I =25A -4.3 5 m GS D T =25C see Figure 13 j Dynamic characteristics gate-drain charge V =10V I =75A -49 -nC Q GD GS D V = 50 V see Figure 14 DS total gate charge - 170 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --537mJ DS(AL)S GS j(init) drain-source avalanche I = 120 A V 100 V D sup energy R =50 Unclamped GS I2PAKPSMN5R0-100ES NXP Semiconductors N-channel 100 V 5 m standard level MOSFET in I2PAK 1 Continuous current limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN5R0-100ES All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 26 September 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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