X-On Electronics has gained recognition as a prominent supplier of PSMN6R5-80PS mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN6R5-80PS mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN6R5-80PS NXP

PSMN6R5-80PS electronic component of NXP
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See Product Specifications
Part No.PSMN6R5-80PS
Manufacturer: NXP
Category:MOSFET
Description: MOSFET,N CH,80V,100A,TO-220AB
Datasheet: PSMN6R5-80PS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.599 ea
Line Total: USD 1.6

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 1.599
10 : USD 1.4976
100 : USD 1.2324
500 : USD 1.0842
1000 : USD 1.0374

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
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PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --210W tot mb T junction temperature -55 - 175 C j Static characteristics 2 drain-source on-state V =10V I =15A -5.9 6.9 m R DSon GS D resistance T = 25 C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =25A -16 - nC GD GS D V = 40 V see Figure 14 DS Q total gate charge - 71 - nC G(tot) see Figure 15 Avalanche ruggedness non-repetitive drain-source V =10V T =25C --700mJ E DS(AL)S GS j(init) avalanche energy I =49 A V 80 V D sup R =50 unclamped GS 1 Continuous current rating is limited by package. 2 Measured 3 mm from package.PSMN6R5-80PS NXP Semiconductors N-channel 80 V 6.9 m standard level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R5-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN6R5-80PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 1 November 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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