Product Information

PSMN7R0-100ES,127

PSMN7R0-100ES,127 electronic component of Nexperia

Datasheet
MOSFET Single NChannel 100V 475A 269W 12mOhms
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 3.134
10 : USD 2.1514
100 : USD 1.7602
500 : USD 1.5162
1000 : USD 1.2929
2500 : USD 1.2459
5000 : USD 1.2342
10000 : USD 1.1871
25000 : USD 1.1495
N/A

Obsolete
0 - WHS 2

MOQ : 10
Multiples : 1
10 : USD 3.6085
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
Configuration
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

PSMN7R0-100ES N-channel 100V 6.8 m standard level MOSFET in I2PAK. Rev. 03 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 269 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 315 mJ DS(AL)S GS j(init) drain-source I = 100 A V 100 V D sup avalanche energy unclamped R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =25A -36 -nC GD GS D V = 50 V see Figure 15 DS and 14 Q total gate charge V =10V I =25A - 125 - nC G(tot) GS D V = 50 V see Figure 14 DS and 15PSMN7R0-100ES Nexperia N-channel 100V 6.8 m standard level MOSFET in I2PAK. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --12 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A -5.4 6.8 m GS D T = 25 C see Figure 13 j 1 Continuous current is limited by package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R0-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN7R0-100ES 3 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 23 February 2010 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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