PSMN7R0-100ES,127 Nexperia

PSMN7R0-100ES,127 electronic component of Nexperia
PSMN7R0-100ES,127 Nexperia
PSMN7R0-100ES,127 MOSFETs
PSMN7R0-100ES,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN7R0-100ES,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN7R0-100ES,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN7R0-100ES,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Single NChannel 100V 475A 269W 12mOhms
Datasheet: PSMN7R0-100ES,127 Datasheet (PDF)
Price (USD)
255: USD 1.8438 ea
Line Total: USD 470.17 
Availability : 0
  
QtyUnit Price
255$ 1.8438
500$ 1.6563
1000$ 1.5245
10000$ 1.3592
100000$ 1.1389

Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.134
10$ 2.1514
100$ 1.7602
500$ 1.5162
1000$ 1.2929
2500$ 1.2459
5000$ 1.2342
10000$ 1.1871
25000$ 1.1495


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 10
Multiples : 1
QtyUnit Price
10$ 3.6085


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 255
Multiples : 1
QtyUnit Price
255$ 1.8438
500$ 1.6563
1000$ 1.5245
10000$ 1.3592
100000$ 1.1389

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
Configuration
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN7R0-100ES,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN7R0-100ES,127 and other electronic components in the MOSFETs category and beyond.

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PSMN7R0-100ES N-channel 100V 6.8 m standard level MOSFET in I2PAK. Rev. 03 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 269 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 315 mJ DS(AL)S GS j(init) drain-source I = 100 A V 100 V D sup avalanche energy unclamped R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =25A -36 -nC GD GS D V = 50 V see Figure 15 DS and 14 Q total gate charge V =10V I =25A - 125 - nC G(tot) GS D V = 50 V see Figure 14 DS and 15PSMN7R0-100ES Nexperia N-channel 100V 6.8 m standard level MOSFET in I2PAK. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --12 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A -5.4 6.8 m GS D T = 25 C see Figure 13 j 1 Continuous current is limited by package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R0-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN7R0-100ES 3 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 23 February 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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