X-On Electronics has gained recognition as a prominent supplier of PSMN7R0-100PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN7R0-100PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN7R0-100PS,127 Nexperia

PSMN7R0-100PS,127 electronic component of Nexperia
PSMN7R0-100PS,127 Nexperia
PSMN7R0-100PS,127 MOSFETs
PSMN7R0-100PS,127  Semiconductors

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Part No. PSMN7R0-100PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH 100V STD LEVEL MOSFET
Datasheet: PSMN7R0-100PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.65 ea
Line Total: USD 3.65 
Availability - 36
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
36
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 3.65
10 : USD 2.5645
100 : USD 2.079
500 : USD 1.859
1000 : USD 1.65
2500 : USD 1.639

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Configuration
Height
Length
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN7R0-100PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN7R0-100PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN7R0-100PS N-channel 100V 6.8 m standard level MOSFET in TO220. 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 269 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - - 12 m DSon GS D j resistance Fig. 12 V = 10 V I = 15 A T = 25 C - 5.4 6.8 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 36 - nC GD GS D DS Fig. 15 Fig. 14 Q total gate charge V = 10 V I = 25 A V = 50 V - 125 - nC G(tot) GS D DS Fig. 14 Fig. 15Nexperia PSMN7R0-100PS N-channel 100V 6.8 m standard level MOSFET in TO220. Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 100 A - - 316 mJ DS(AL)S GS j(init) D source avalanche V = 100 V unclamped R = 50 sup GS energy 1 Continuous current is limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R0-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN7R0-100PS PSMN7R0-100PS PSMN7R0-100PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 17 October 2013 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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