X-On Electronics has gained recognition as a prominent supplier of PSMN9R5-100XS,127 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN9R5-100XS,127 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN9R5-100XS,127

PSMN9R5-100XS,127 electronic component of NXP
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Part No.PSMN9R5-100XS,127
Manufacturer: NXP
Category:MOSFET
Description: Trans MOSFET N-CH 100V 44.2A 3-Pin(3+Tab) TO-220F Rail
Datasheet: PSMN9R5-100XS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 3.861 ea
Line Total: USD 34.75

Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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PSMN9R5-100XS N-channel 100V 9.6 m standard level MOSFET in TO220F (SOT186A) Rev. 3 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Isolated package and conduction losses Suitable for standard level gate drive 1.3 Applications AC-to-DC power supply equipment Server power supplies Motor control Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 100 V DS j j I drain current T =25 C; V =10V; see Figure 1 - - 44.2 A D mb GS P total power dissipation T =25 C; see Figure 2 - - 52.6 W tot mb Static characteristics R drain-source on-state V =10V; I =10A; T =25C; - 8.15 9.6 m DSon GS D j resistance see Figure 12; see Figure 13 Dynamic characteristics Q gate-drain charge V =10V; I =10A; V =50V; - 24.3 - nC GD GS D DS see Figure 14; see Figure 15 Q total gate charge - 81.5 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V; T =25C; I =44.2A; - - 260 mJ DS(AL)S GS j(init) D avalanche energy V 100 V; unclamped; R =50 ; sup GS see Figure 3 TO-220FPSMN9R5-100XS NXP Semiconductors N-channel 100V 9.6 m standard level MOSFET in TO220F (SOT186A) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb mounting base; isolated mbb076 S 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R5-100XS TO-220F plastic single-ended package; isolated heatsink mounted; SOT186A 1 mounting hole; 3-lead TO-220full pac PSMN9R5-100XS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 6 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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