Product Information

PSMN9R5-30YLC

PSMN9R5-30YLC electronic component of Nexperia

Datasheet
MOSFET, N CH, 30V, 44A, LFPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9466 ea
Line Total: USD 0.95

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 100
Multiples : 1

Stock Image

PSMN9R5-30YLC
Nexperia

100 : USD 0.7055
500 : USD 0.5375
1000 : USD 0.43
1500 : USD 0.4052

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN9R5-30YLC N-channel 30 V 9.8 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, and QOSS for resistance high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --30 V DS j I drain current T =25C V =10V --44 A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --34 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =15A - 10.3 12.1 m DSon GS D resistance T =25C see Figure 12 j V =10V I =15A -8.3 9.8 m GS D T =25C see Figure 12 j LFPAKPSMN9R5-30YLC NXP Semiconductors N-channel 30 V 9.8 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =15A -1.6 -nC GD GS D V =15V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =15A -5 -nC G(tot) GS D V =15V see Figure 14 DS see Figure 15 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R5-30YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN9R5-30YLC All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 1 September 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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