HL65014DG

Data Sheet HL65014DG AIGaInP Laser Diode 647~650nm/150mW Outline Features: Wavelength selection: 647~650nm High optical output power: 150mW Operating temperature: +40C Small package: 5.6mm Single transverse mode TE mode oscillation Applications: Laser module Light source of optical equipments (unit:mm) Internal Circuit 3 1 LD D flange) 2 1 HL65014DG Rev0. Jan. 31. 2014 Data Sheet HL65014DG Absolute Maximum Ratings (Tc=25C) Item Symbol Ratings Unit Optical output power Po 150 mW LD Reverse Voltage VR(LD) 2 V Operating Temperature C Topr -10 ~ +40 Storage Temperature Tstg -40 ~ +85 C Note: Operating temperature is defined by Case temperature Tc. High increase in temperature of LD chip itself is expected during operation due to high current density. Thus, without proper heat dissipation, it is observed that no specific output power is achieved or it results to LD degradation. It is advised that sufficient measure of heat dissipation should be taken so that LDs maximum operating temperature is not exceeded during actual operation. Optical and Electrical Characteristics (Tc=25C) Parameter Symbol Min Typ Max Unit Test Condition Threshold current Ith - 110 140 mA - Operating current Iop - 280 350 mA Po=150mW Operating voltage Vop - 2.6 3.0 V Po=150mW Beam divergence 6 9 13 Po=150mW // Parallel to the junction Beam divergence 13 17 22 Po=150mW Perpendicular to the junction Lasing Wavelength 647 - 650 nm Po=150mW p 2 HL65014DG Rev0. Jan. 31. 2014