Photomicrosensor (Transmissive) EE-SX1137 Be sure to read Precautions on page 25. Dimensions Features General-purpose model with a 5-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 30C to 100C Internal Circuit Soldering temperature Tsol 260C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. A E Dimensions Tolerance 2. The pulse width is 10 s maximum with a frequency of 3 mm max. 0.3 100 Hz. Terminal No. Name 3. Complete soldering within 10 seconds. 3 < mm 6 0.375 A Anode 6 < mm 10 0.45 K Cathode 10 < mm 18 0.55 C Collector E Emitter 18 < mm 30 0.65 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 82 EE-SX1137 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V CE Ta = 30C Ta = 25C Ta = 70C Ambient temperature Ta (C) Forward current I (mA) F Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Ambient temperature Ta (C) CollectorEmitter voltage V (V) Ambient temperature Ta (C) CE Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 I = 20 mA I = 20 mA F V = 5 V F CC V = 10 V V = 10 V CE Ta = 25C CE Ta = 25C 100 Ta = 25C (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (k) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1137 Photomicrosensor (Transmissive) 83 Forward current I (mA) Response time tr, tf (s) Light current I (mA) F L Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis)