EE-SY113

Photomicrosensor (Reflective) EE-SY113 Be sure to read Precautions on page 24. Dimensions Features Compact reflective Photomicrosensor (EE-SY110) with a molded Note: All units are in millimeters unless otherwise indicated. housing and a dust-tight cover. Recommended sensing distance = 4.4 mm Four, 0.5 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Notch for directional discrimination Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V 2.5 R Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V --- Four, 0.25 ECO voltage 15 to 18 Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 40C to 80C Internal Circuit perature Storage Tstg 40C to 85C A C Unless otherwise specified, the Soldering temperature Tsol 260C tolerances are as shown below. (see note 3) K E Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. 3 mm max. 0.3 Terminal No. Name 2. The pulse width is 10 s maximum with a frequency of 3 < mm 6 0.375 100 Hz. A Anode 6 < mm 10 0.45 3. Complete soldering within 10 seconds. K Cathode 10 < mm 18 0.55 C Collector 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 160 A min., 1,600 A max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 4.4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion CollectorEmitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. 166 EE-SY113 Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) d = 4.4 mm Sensing object: White V = 10 V CE I = 40 mA F paper with a reflection d = 4.4 mm factor of 90% Sensing object: White paper with a reflection factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Forward current I (mA) F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V I = 20 mA CE F Ta = 25C 0 x V = 5 V CE Ambient temperature Ta (C) Ambient temperature Ta (C) Load resistance R (k) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Angle Characteristics (Typical) (Typical) (Typical) Ta = 25C I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25C Sensing object: White paper d = 4.4 mm 1 with a reflection factor of 90% Sensing object: White paper with a reflection factor of 90% Ta = 25C V = 10 V CE I = 20 mA F d = 4.4 mm d 1 Sensing object: White paper with a reflection factor of 90% Direction d 2 Angle deviation () Distance d (mm) Distance d (mm) 2 Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY113 Photomicrosensor (Reflective) 167 Light current I (A) Relative light current I (%) Forward current I (mA) L L F Collector dissipation Pc (mW) Dark current I (nA) Relative light current I (%) D L Light current I (A) L Relative light current I (%) Response time tr, tf (s) L Light current I (mA) L