Photomicrosensor (Reflective) EE-SY171 Be sure to read Precautions on page 24. Dimensions Features 3-mm-tall, thin model Note: All units are in millimeters unless otherwise indicated. Recommended sensing distance = 3.5 mm Two, 1.2 dia. Two, 2 dia. Anode mark Absolute Maximum Ratings (Ta = 25C) Four, 0.5 Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V --- ECO 0 to 30 Four, 0.25 voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 40C to 85C Internal Circuit perature Storage Tstg 40C to 85C A C Unless otherwise specified, the Soldering temperature Tsol 260C tolerances are as shown below. (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temper- K E Dimensions Tolerance ature exceeds 25C. 3 mm max. 0.3 2. The pulse width is 10 s maximum with a frequency of Terminal No. Name 100 Hz. 3 < mm 6 0.375 A Anode 3. Complete soldering within 10 seconds. 6 < mm 10 0.45 K Cathode 10 < mm 18 0.55 C Collector 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 50 A min., 500 A max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 3.5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 10 V with no reflection LEAK F CE CollectorEmitter saturated V (sat) --- --- CE voltage Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. 158 EE-SY171 Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25C d = 3.5 mm Ta = 25C Sensing object: White V = 10 V CE paper with a reflection d = 3.5 mm I = 40 mA F factor of 90% Sensing object: White paper with a I = 30 mA reflection factor of F 90% I = 20 mA F I = 10 mA F Ambient temperature Ta (C) Forward current I (mA) F CollectorEmitter voltage V (V) CE Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) I = 20 mA V = 10 V Vcc = 5 V F CE V = 5 V 0lx Ta = 25C CE Load resistance R (k) Ambient temperature Ta (C) L Ambient temperature Ta (C) Sensing Distance Characteristics Sensing Position Characteristics Sensing Angle Characteristics (Typical) (Typical) (Typical) IF = 20 mA VCE = 10 V I = 20 mA F Ta = 25C V = 10 V CE Ta = 25C Sensing object: White paper d = 3.5 mm with a reflection factor of 90% d1 = 3 mm d1 = 4 mm d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Ta = 25C I = 20 mA F V = 10 V CE Sensing object: White paper with a reflection factor of 90% Distance d (mm) Angle deviation () 2 Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY171 Photomicrosensor (Reflective) 159 Light current I (A) L Relative light current I (%) Forward current I (mA) L F Collector dissipation Pc (mW) Relative light current I (%) Dark Current I (nA) L D Light current I (A) L Relative light current I (%) L Response time tr, tf (s) Light current I (A) L