Photomicrosensor (Reflective) EE-SY169A Be sure to read Precautions on page 24. Dimensions Features High-quality model with plastic lenses. Note: All units are in millimeters unless otherwise indicated. Highly precise sensing range with a tolerance of 0.6 mm horizon- tally and vertically. Convergent reflective model with infrared LED. Recommended sensing distance = 4.0 mm Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP Surface A rent (see note 2) Two, C0.2 Reverse voltage V 3 V R 10.1 dia. 10.1 dia. Detector CollectorEmitter V 30 V CEO (see note) voltage (see note) EmitterCollector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 0C to 70C Note: These dimensions are for the Internal Circuit perature Storage Tstg 20C to 80C surface A. Other lead wire A C pitch dimensions are for the Soldering temperature Tsol 260C housing surface. (see note 3) Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- tolerances are as shown below. K E ature exceeds 25C. Dimensions Tolerance 2. The pulse width is 10 s maximum with a frequency of Terminal No. Name 3 mm max. 0.3 100 Hz. 3. Complete soldering within 10 seconds. A Anode 3 < mm 6 0.375 K Cathode 6 < mm 10 0.45 C Collector 10 < mm 18 0.55 E Emitter 18 < mm 30 0.65 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.5 V max. I = 30 mA F F Reverse current I 10 A max. V = 4 V R R Peak emission wavelength 920 nm typ. I = 20 mA P F Detector Light current I 160 A min., 2,000 A max. I = 20 mA, V = 5 V L F CE White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 5 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 5 V with no reflec- LEAK F CE tion CollectorEmitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- 850 nm typ. V = 5 V P CE length Rising time tr 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k, I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. 162 EE-SY169A Photomicrosensor (Reflective) Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25C d = 4 mm d = 4 mm Sensing object: White I = 40 mA V = 5 V F CE paper with a reflection factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F I = 5 mA F Forward current I (mA) F CollectorEmitter voltage V (V) Ambient temperature Ta (C) CE Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V I = 20 mA V = 10 V F CE Ta = 25C V = 5 V 0lx CE Ambient temperature Ta (C) Load resistance R (k) Ambient temperature Ta (C) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F Sensing object: White V = 5 V CE paper with a reflection IF = 20 mA Ta = 25C Ta = 25C factor of 90% VCE = 5 V d = 4 mm 1 I = 20 mA F Ta = 25C Sensing object: V = 10 V CE White paper with d1 = 3.5 mm Sensing object: a reflection factor d1 = 4.0 mm of 90% White paper d1 = 4.5 mm Sensing with a reflection object d = 0 factor of 90% Direction Sen- sor Direction Sen- sor Distance d (mm) 2 Distance d (mm) 2 Distance d (mm) Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit Ta = 25 I = 20 mA V F CE d = 3 mm Ta = 25C = 10 V Input d = 4 mm I = 20 mA F Sensing object: d = 5 mm V = 10 V CE White paper d = 3 mm 90 % with a reflection d = 4 mm Output 10 % d = 5 mm factor of 90% Input Output Sensing object: White paper with a reflection factor of 90% Angle deviation () Angle deviation () EE-SY169A Photomicrosensor (Reflective) 163 Relative light current I (%) Light current I (A) L L Relative light current I (%) Forward current I (mA) L F Collector dissipation Pc (mW) Dark Current I (nA) D Light current I (A) Relative light current I (%) Relative light current I (%) L L L Response time tr, tf (s) Light current I (A) L Relative light current I (%) L