Product Information

EESY313

EESY313 electronic component of Omron

Datasheet
Optical Switches, Reflective, Photo IC Output Reflective w/IC Chip Dark ON

Manufacturer: Omron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 2.9035 ea
Line Total: USD 58.07

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 20
Multiples : 20

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EESY313
Omron

20 : USD 2.9035

     
Manufacturer
Product Category
Sensing Distance
Sensor Output
Collector Emitter Voltage V Br Ceo
Forward Current If
Forward Voltage
Reverse Voltage Vr
Sensor Mounting
Output Current
Supply Voltage Dc Max
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Photomicrosensor (Reflective) EE-SY313/-SY413 Dimensions Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- Five, 0.5 pensation circuit. Compact reflective Photomicrosensor (EE-SY310/-SY410) with a molded housing and a dust-tight cover. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. Dark ON model (EE-SY313) Light ON model (EE-SY413) Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA (see note 1) F Reverse voltage V 4 V R 15 to 18 17 to 24 Pulse forward I 1 A FP current (see note 2) Detector Power supply V 16 V CC voltage Internal Circuit Output voltage V 28 V OUT A V Output current I 16 mA OUT O Unless otherwise specified, the Permissible P 250 mW (see note 1) OUT K G output dissipa- tolerances are as shown below. tion Terminal No. Name Dimensions Tolerance Ambient tem- Operating Topr 40C to 65C perature A Anode 3 mm max. 0.3 Storage Tstg 40C to 85C K Cathode Soldering temperature Tsol 260C 3 < mm 6 0.375 (see note 3) V Power supply 6 < mm 10 0.45 (Vcc) Note: 1. Refer to the temperature rating chart if the ambient temper- 10 < mm 18 0.55 O Output (OUT) ature exceeds 25C. 18 < mm 30 0.65 G Ground (GND) 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wave- 920 nm typ. I = 20 mA P F length Detector Low-level output voltage V 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, I = 16 mA, without incident light (EE- OL OL SY313), with incident light (EE-SY413) (see notes 1 and 2) High-level output volt- V 15 V min. Vcc = 16 V, R = 1 k , with incident light (EE-SY313), with- OH L age out incident light (EE-SY413) (see notes 1 and 2) Current consumption I 3.2 mA typ., 10 mA max. Vcc = 16 V CC Peak spectral sensitivity 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 10 mA typ., 20 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis H17% typ. V = 4.5 to 16 V CC Response frequency f 50 pps min. V = 4.5 to 16 V, I = 20 mA, I = 16 mA CC F OL Response delay time t (t )3 s typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA PLH PHL CC F OL Response delay time t (t )20 s typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA PHL PLH CC F OL EE-SY313/-SY413 Photomicrosensor (Reflective) 247Note: 1. With incident ligh denotes the condition whereby 4. The value of the response frequency is measured by rotating the light reflected by white paper with a reflection the disk as shown below. factor of 90% at a sensing distance of 4.4 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 4.4 mm. 15 mm 15 mm 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated 4.4 mm from the respective forward LED currents when the 5. The following illustrations show the definition of response delay photo IC is turned from ON to OFF and when the time. The value in the parentheses applies to the EE-SY413. photo IC is turned from OFF to ON. Input Input Output Output (tPLH) (tPHL)((tPHL)tPLH) EE-SY313 EE-SY413 Engineering Data Note: The values in the parentheses apply to the EE-SY413. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25C R = 1 k L I OFF (I ON) Ta = 30C FT FT Ta = 25C Ta = 70C I ON (I OFF) FT FT Supply voltage V (V) Forward voltage V (V) CC Ambient temperature Ta (C) F LED Current vs. Ambient Low-level Output Voltage vs. Low-level Output Voltage vs. Temperature Characteristics Output Current (Typical) Ambient Temperature (Typical) Characteristics (Typical) Ta = 25C V = 5 V CC V = 5 V CC V = 5 V R = 330 CC L I = 0 mA (20 mA) F I = 0 mA (20 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Output current I (mA) Ambient temperature Ta (C) Ambient temperature Ta (C) C Current Consumption vs. Supply Response Delay Time vs. Forward Sensing Position Characteristics Voltage (Typical) Current (Typical) (Typical) I = 20 mA F VCC = 5 V V = 5 V CC Ta = 25C Ta = 25C R = 330 I = 0 mA (15 mA) L F Sensing object: White Ta = 25C paper with a reflection VOUT factor of 90% (EE-SY3 ) VOUT (EE-SY4 ) tPHL (tPLH) Operate Release tPLH (tPHL) Supply voltage V (V) Distance d (mm) CC 1 Forward current I (mA) F 248 EE-SY313/-SY413 Photomicrosensor (Reflective) Current consumption Icc (mA) LED current I (mA) FT Forward current I (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (s) PHL PLH Forward current I (mA) F Distance d (mm) 2 Low level output voltage V (V) OL LED current I (mA) FT

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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