Product Information

15C02CH-TL-E

15C02CH-TL-E electronic component of ON Semiconductor

Datasheet
ON Semiconductor Bipolar Transistors - BJT BIP NPN 1A 15V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0938 ea
Line Total: USD 0.47

2201 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2201 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 5
Multiples : 5

Stock Image

15C02CH-TL-E
ON Semiconductor

5 : USD 0.0938
50 : USD 0.0682
150 : USD 0.0507
500 : USD 0.0467
3000 : USD 0.0379
6000 : USD 0.0369

594 - WHS 2


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

15C02CH-TL-E
ON Semiconductor

1 : USD 0.4669
10 : USD 0.2622
100 : USD 0.1276
1000 : USD 0.0966
3000 : USD 0.084
9000 : USD 0.0828
45000 : USD 0.077
99000 : USD 0.077

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Ordering number : EN7353B 15C02CH Bipolar Transistor 15C02CH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =12V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I =0A 100 nA EBO EB C DC Current Gain h V =2V, I =50mA 300 800 FE CE C Gain-Bandwidth Product f V =2V, I =50mA 400 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 4 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =400mA, I =20mA 140 280 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =400mA, I =20mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 20 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 15 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 5 V (BR)EBO E C Turn-On Time t 30 ns on Storage Time t See speci ed Test Circuit. 165 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 + + 220 F 470 F V = --5V V =5V BE CC I =20I = --20I =400mA C B1 B2 Ordering Information Device Package Shipping memo 15C02CH-TL-E CPH3 3,000pcs./reel Pb Free I -- V I -- V C CE C BE 1000 1200 V =2V CE 900 1000 800 700 800 600 600 500 400 400 300 0.6mA 200 200 0.3mA 100 I =0 B 0 0 0 100 200 300 400 500 600 700 800 900 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- mV IT05037 Base-to-Emitter Voltage, V -- V IT05038 CE BE No.7353-2/6 1.0mA 1.5mA 2.0mA 3.0mA 5.0mA 7.0mA 10.0mA 20.0mA 30.0mA Ta=75C 25C --25C Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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