Product Information

1N4934

1N4934 electronic component of ON Semiconductor

Datasheet
1N4934-TR 100V FAST RECOVERY DIODE AXIAL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1183 ea
Line Total: USD 0.12

436 - Global Stock
Ships to you by
Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
436 - WHS 1


Ships to you by Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

1N4934
ON Semiconductor

1 : USD 0.1183
10 : USD 0.0591
50 : USD 0.0473
250 : USD 0.0414
500 : USD 0.0399

     
Manufacturer
Product Category
Package / Case
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Repetitive Reverse Voltage Vrrm Max
Reverse Recovery Time Trr Max
Diode Case Style
No. Of Pins
Svhc
Current If @ Vf
Current Ifsm
External Diameter
External Length / Height
Junction Temperature Tj Max
Junction Temperature Tj Min
Junction To Case Thermal Resistance A
Operating Temperature Range
Power Dissipation Ptot Max
Reverse Recovery Time Trr Typ
Termination Type
LoadingGif

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W E E E S H 1N4933 ... 1N4937 I = 1 A V = 50...600 V 1N4933 ... 1N4937 FAV RRM V < 1.2 V I = 30/33 A F FSM Fast Recovery Rectifier Diodes Tjmax = 150C trr < 200 ns Gleichrichterdioden mit schnellem Sperrverzug Version 2015-11-03 Typical Application Typische Anwendung ~DO-41 / ~DO-204AC Rectification of medium frequencies, Gleichrichtung mittlerer Frequenzen Snubber or Bootstrap diodes Beschaltungs- oder Bootstrapdioden 1 1 Commercial grade ) Standardausfhrung ) 0.1 Features Besonderheit 2.6 Compliant to RoHS, REACH, Konform zu RoHS, REACH, Pb 1 1 Conflict Minerals ) Konfliktmineralien ) 1 1 Mechanical Data ) Mechanische Daten ) Taped in ammo pack 5000 Gegurtet in Ammo-Pack Weight approx. 0.4 g Gewicht ca. 0.07 Case material UL 94V-0 Gehusematerial 0.77 Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen MSL: N/A Dimensions - Mae mm 2 2 Maximum ratings ) Grenzwerte ) Type Repetitive peak reverse voltage Surge peak reverse voltage Typ Periodische Spitzensperrspannung Stospitzensperrspannung VRRM V VRSM V 1N4933 50 50 1N4934 100 100 1N4935 200 200 1N4936 400 400 1N4937 600 600 3 Max. average forward rectified current, R-load T = 75C I 1 A ) A FAV Dauergrenzstrom in Einwegschaltung mit R-Last 3 Repetitive peak forward current f > 15 Hz I 10 A ) FRM Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave T = 25C I 30/33 A A FSM Stostrom fr eine 50/60 Hz Sinus-Halbwelle 2 2 Rating for fusing Grenzlastintegral, t < 10 ms T = 25C i t 4.5 A s A Junction temperature Sperrschichttemperatur T -50...+150C j Storage temperature Lagerungstemperatur TS -50...+175C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 T = 25C unless otherwise specified T = 25C wenn nicht anders angegeben j j 3 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gltig, wenn die Anschlussdrhte in 10 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden Diotec Semiconductor AG 1N4933 ... 1N4937 Characteristics Kennwerte Forward voltage T = 25C I = 1 A V < 1.2 V j F F Durchlass-Spannung Leakage current T = 25C V = V I < 5 A j R RRM R Sperrstrom T = 100C V = V I < 100 A j R RRM R Typical junction capacitance V = 4 V C 15 pF R j Typische Sperrschichtkapzitt Reverse recovery time IF = 0.5 A through/ber trr < 200 ns Sperrverzugszeit I = 1 A to/auf I = 0.25 A R R 1 Thermal resistance junction to ambient air R < 45 K/W ) thA Wrmewiderstand Sperrschicht umgebende Luft Thermal resistance junction to leads R < 15 K/W thL Wrmewiderstand Sperrschicht Anschlussdraht 2 120 10 % A 100 T = 125C j 10 80 T = 25C j 1 60 40 -1 10 20 I F I FAV 30a-(1a-1.2v) -2 10 0 0.4 1.0 1.4 0 T 100 150 V 0.8 1.2 V 1.8 50 C F A 1 Rated forward current versus ambient temperature ) Forward characteristics (typical values) 1 Zul. Richtstrom in Abh. von der Umgebungstemp. ) Durchlasskennlinien (typische Werte) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gltig, wenn die Anschlussdrhte in 10 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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