2ST501T STMicroelectronics

2ST501T HIGH VOLTAGE NPN POWER TRANSISTOR n HIGH VOLTAGE SPECIAL DARLINGTON Figure 1: Package STRUCTURE n VERY RUGGED BIPOLAR TECHNOLOGY n HIGH OPERATION JUNCTION TEMPERATURE n HIGH DC CURRENT GAIN APPLICATIONS 3 n DRIVER FOR SOLENOID, RELAY AND 2 MOTOR 1 TO-220 DESCRIPTION The 2ST501T is a High Voltage NPN silicon transistor in monolithic special Darlington configuration mounted in Jedec TO-220 plastic Figure 2: Internal Schematic Diagram package. Table 1: Order Codes Part Number Marking Package Packaging 2ST501T 2ST501T TO-220 TUBE Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 500 V CES BE V Collector-Emitter Voltage (I = 0) 350 V CEO B V Emitter-Base Voltage (I = 0) 5V EBO C I Collector Current 4A C I Collector Peak Current (t < 5ms) 8A CM p I Base Current 0.5 A B I Base Peak Current (t < 5ms) 2.5 A BM p o P 100 W Total Dissipation at T = 25 C tot C T Storage Temperature -65 to 150 C stg T Max. Operating Junction Temperature 150 C J Rev. 1 February 2005 1/62ST501T Table 3: Thermal Data o R Thermal Resistance Junction-Case Max 1.25 thj-case C/W o Table 4: Electrical Characteristics (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current V = 500 V 100 mA CES CE (I = 0) 500 mA o E V = 500 V T = 125 C CE case I Collector Cut-off Current V = 350 V 100 mA CEO CE (I = 0) o 500 mA B V = 350 V T = 125 C CE case I Emitter Cut-off Current V = 5 V 10 mA EBO EB (I = 0) C V * Collector-Emitter I = 10 mA L = 10 mH 350 V CEO(sus) C Sustaining Voltage (I = 0 ) B V * Collector-Emitter I = 2 A I = 2 mA 1.5 V CE(sat) C B Saturation Voltage V * Base-Emitter Saturation I = 2 A I = 2 mA 2 V BE(sat) C B Voltage h DC Current Gain I = 2 A V = 2 V 2000 FE C CE INDUCTIVE LOAD V = 12 V V = 250 V CC clamp t Storage Time 15 ms s L = 4 mH I = 2 A C t Fall Time 1.5 ms f I = 20 mA V = -3 V B BE * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. 2/6