2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C TO-92 C B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 100 V CEO V Collector-Base Voltage 100 V CBO V Emitter-Base Voltage 12 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N7052 2N7053 *NZT7053 P Total Device Dissipation 625 1,000 1,000 mW D 5.0 8.0 8.0 Derate above 25C mW/C R Thermal Resistance, Junction to Case 83.3 125 C/W JC Thermal Resistance, Junction to Ambient 200 50 125 R C/W JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm mounting pad for the collector lead min. 6 cm . 1997 Fairchild Semiconductor Corporation2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 100 V (BR)CEO C B V Collector-Base Breakdown Voltage 100 V I = 100 A, I = 0 (BR)CBO C E V Emitter-Base Breakdown Voltage I = 1.0 mA, I = 0 12 V (BR)EBO E C I Collector-Cutoff Current V = 80 V, I = 0 0.1 A CBO CB E I Collector-Cutoff Current V = 80 V, I = 0 0.2 A CES CE E I Emitter-Cutoff Current V = 7.0 V, I = 0 0.1 A EBO EB C ON CHARACTERISTICS* h DC Current Gain I = 100 mA, V = 5.0 V 10,000 FE C CE I = 1.0 A, V = 5.0 V 1,000 20,000 C CE Collector-Emitter Saturation Voltage I = 100 mA, I = 0.1 mA 1.5 V V C B CE(sat) V Base-Emitter On Voltage I = 100 mA, V = 5.0 V 2.0 V C BE BE(on) SMALL SIGNAL CHARACTERISTICS F Transition Frequency I = 100 mA, V = 5.0 V, 200 MHz C CE T Collector-Base Capacitance V = 10 V,f = 1.0 MHz 10 pF C 2N7052 cb CB 2N7053 8.0 *Pulse Test: Pulse Width 300 ms, Duty Cycle 1.0% Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 100 2 = 1000 80 1.6 60 1.2 125 C - 40C 40 0.8 25 C 25 C 125 C 20 - 40C 0.4 0 0 0.001 0.01 0.1 1 10 100 1000 I - COLLECTOR CURRENT (A) I - COLLECTOR CURRENT (mA) C C P06 FE CESAT h - TYPICAL PULSED CURRENT GAIN (K) V - COLLECTOR EMITTER VOLTAGE (V)