Product Information

2N6075B-LF

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Datasheet
ELECTRONICS PART
Manufacturer: ON Semiconductor



Price (USD)

1: USD 0.846 ea
Line Total: USD 0.846

107 - Global Stock
Ships to you by
Tue. 28 Mar
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
107 - Global Stock


Ships to you by Tue. 28 Mar

MOQ : 1
Multiples : 1

Stock Image

2N6075B-LF
ON Semiconductor

1 : USD 0.846
10 : USD 0.423
25 : USD 0.3807
100 : USD 0.3173
500 : USD 0.2855

     
Manufacturer
ON Semiconductor
Product Category
Triacs
Non Repetitive On-State Current
30 A
Rated Repetitive Off-State Voltage VDRM
600 V
On-State Voltage
2 V
Holding Current Ih Max
15 mA
Gate Trigger Voltage - Vgt
2.5 V
Gate Trigger Current - Igt
5 mA
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Package / Case
TO - 225 - 3
Series
2N6075b
Mounting Style
Through Hole
Packaging
Bulk
Off-State Leakage Current Vdrm Idrm
10 uA
Brand
On Semiconductor
Factory Pack Quantity :
500
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2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for fullwave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are 2N6071A/B Series MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit *Peak Repetitive OffState Voltage (Note 1) V V DRM, (T = 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) V J RRM 2N6071A,B 200 2N6073A,B 400 2N6075A,B 600 *OnState RMS Current (T = 85C) Full Cycle Sine Wave 50 to 60 Hz I 4.0 A C T(RMS) *Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, T = +110C) I 30 A J TSM 2 2 Circuit Fusing Considerations (t = 8.3 ms) I t 3.7 A s *Peak Gate Power (Pulse Width 1.0 s, T = 85C) P 10 W C GM *Average Gate Power (t = 8.3 ms, T = 85C) P 0.5 W C G(AV) *Peak Gate Voltage (Pulse Width 1.0 s, T = 85C) V 5.0 V C GM *Operating Junction Temperature Range T -40 to +110 C J *Storage Temperature Range T -40 to +150 C stg Mounting Torque (632 Screw) (Note 2) - 8.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such DRM RRM that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower casetosink thermal resistance. Main terminal 2 and heatsink contact pad are common. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction-to-Case R 3.5 C/W JC Thermal Resistance, Junction-to-Ambient R 75 C/W JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L *Indicates JEDEC Registered Data.

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