Thyristors Datasheet 2N6344A, 2N6348A, 2N6349A Surface Mount 600-800V Pb Description The 2N634xA is designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features Blocking Voltage to 800 V Gate Triggering Guaranteed in all Four Quadrants All Diffused and Glass Passivated Junctions for For 400 Hz Operation, Greater Parameter Uniformity Consult Factory and Stability 8.0 A Devices Available as Additional Information Small, Rugged, Thermowatt 2N6344 thru 2N6349 Construction for Low Thermal PbFree Package is Available Resistance, High Heat Dissipation and Durability Functional Diagram Resources Accessories Samples Pin Out CASE 221A STYLE 4 1 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/11/21Thyristors Datasheet 2N6344A, 2N6348A, 2N6349A Surface Mount 600-800V Maximum Ratings and Thermal Characteristics (TJ = 25C unless otherwise noted) Rating Symbol Value Unit 2N6344A, 600 *Peak Repetitive Off-State Voltage (Note 1) V , 2N6348A DRM V (T = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) V J RRM 2N6349A 800 (T =+80C) 12 *On-State RMS Current C I A T (RMS) (Full Cycle Sine Wave 50 to 60 Hz) (T =+90C) 6.0 C *Peak NonRepetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, T = +80C) I 100 A C TSM Preceded and followed by rated current 2 Circuit Fusing Considerations (t = 8.3 ms) I t 59 As *Peak Gate Power (T = +80C, Pulse Width = 2 s) P 20 W C GM *Average Gate Power (T = +80C, t = 8.3 ms) P 0.5 W C G(AV) *Peak Gate Current (T = +80C, Pulse Width = 2.0 s) I 2.0 A C GM *Peak Gate Voltage (T = +80C, Pulse Width = 2.0 s) V 10 V C GM *Operating Junction Temperature Range T -40 to +125 C J *Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. * Indicates JEDEC Registered Data. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. DRM RRM Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 2.0 C/W 8JC Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Indicates JEDEC Registered Data. Electrical Characteristics - OFF (TC = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 10 A *Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 100C I - - 2.0 mA D DRM RRM J RRM 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/11/21