2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. www.onsemi.com Features High DC Current Gain 7 AMPERE High Current Gain Bandwidth Product POWER TRANSISTORS TO220 Compact Package COMPLEMENTARY SILICON These Devices are PbFree and are RoHS Compliant* 30 50 70 VOLTS, 40 WATTS MAXIMUM RATINGS (Note 1) PNP NPN Rating Symbol Value Unit COLLECTOR 2, 4 COLLECTOR 2, 4 CollectorEmitter Voltage V Vdc CEO 2N6111, 2N6288 30 2N6109 50 1 1 2N6107, 2N6292 70 BASE BASE CollectorBase Voltage V Vdc CB 2N6111, 2N6288 40 EMITTER 3 EMITTER 3 2N6109 60 2N6107, 2N6292 80 4 EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 7.0 Adc C TO220 Collector Current Peak I 10 Adc CM CASE 221A STYLE 1 Base Current I 3.0 Adc B Total Power Dissipation P D 1 2 T = 25 C 40 W C 3 Derate above 25 C 0.32 W/C Operating and Storage Junction T , T 65 to +150 C J stg MARKING DIAGRAM Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2N6xxxG THERMAL CHARACTERISTICS AYWW Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 3.125 C/W JC 2N6xxx = Specific Device Code xxx = See Table on Page 4 G = PbFree Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please See detailed ordering, marking, and shipping information in download the ON Semiconductor Soldering and Mounting Techniques the package dimensions section on page 4 of this data sheet. Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 11 2N6107/D2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS V Vdc CollectorEmitter Sustaining Voltage (Note 3) CEO(sus) (I = 100 mAdc, I = 0) C B 30 2N6111, 2N6288 50 2N6109 70 2N6107, 2N6292 Collector Cutoff Current I mAdc CEO (V = 20 Vdc, I = 0) CE B 2N6111, 2N6288 1.0 (V = 40 Vdc, I = 0) CE B 2N6109 1.0 (V = 60 Vdc, I = 0) CE B 2N6107, 2N6292 1.0 Collector Cutoff Current I CEX (V = 40 Vdc, V = 1.5 Vdc) CE EB(off) 2N6111, 2N6288 100 Adc (V = 60 Vdc, V = 1.5 Vdc) CE EB(off) 2N6109 100 (V = 80 Vdc, V = 1.5 Vdc) CE EB(off) 2N6107, 2N6292 100 (V = 30 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2N6111, 2N6288 2.0 mAdc (V = 50 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2N6109 2.0 (V = 70 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2N6107, 2N6292 2.0 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 2.0 Adc, V = 4.0 Vdc) C CE 2N6107, 2N6292 30 150 (I = 2.5 Adc, V = 4.0 Vdc) C CE 2N6109 30 150 (I = 3.0 Adc, V = 4.0 Vdc) C CE 2N6111, 2N6288 30 150 (I = 7.0 Adc, V = 4.0 Vdc) C CE All Devices 2.3 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 7.0 Adc, I = 3.0 Adc) 3.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 7.0 Adc, V = 4.0 Vdc) 3.0 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 4) f MHz T (I = 500 mAdc, V = 4.0 Vdc, f = 1.0 MHz) C CE test 2N6288, 2N6292 4.0 2N6107, 2N6109, 2N6111 10 Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 250 CB E SmallSignal Current Gain h fe (I = 0.5 Adc, V = 4.0 Vdc, f = 50 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f = h f T fe test