The 2N6404G is a power MOSFET designed by ON Semiconductor. It is a P-channel enhancement mode field effect transistor (MOSFET). It has a drain-source breakdown voltage ranging from -20V to -30V, maximum continuous drain current of -1.5A, and a threshold voltage of -2.0V. It is available in a TO-92 surface mount package. This component is ideal for applications requiring low leakage and ON resistances, such as consumer electronics, battery management systems, and USB Power Delivery solutions.