2N7000TA is a P-Channel enhancement mode MOSFET transistor manufactured by ON Semiconductor. This transistor has a very low on-state resistance, making it ideal for use in applications in which low resistance is needed, such as switching and amplifier circuits. This device features an extended drain-source rated for up to 200V and has extremely fast switching times. With a low level gate charge and maximum drain current rating of 600mA, this device is well-suited for use in various low power applications. The package is available in a TO-92-3 surface mount format.