Product Information

2SA1416S-TD-E

2SA1416S-TD-E electronic component of ON Semiconductor

Datasheet
Transistors Bipolar - BJT BIP PNP 1A 100V
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1509 ea
Line Total: USD 0.15

1 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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2SA1416S-TD-E
ON Semiconductor

1 : USD 0.1509
10 : USD 0.1479
100 : USD 0.1479
500 : USD 0.1479

3806 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

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2SA1416S-TD-E
ON Semiconductor

1 : USD 0.2755
10 : USD 0.2727
25 : USD 0.2519
100 : USD 0.2506
250 : USD 0.2492
500 : USD 0.2443
1000 : USD 0.2443
3000 : USD 0.2443

517 - WHS 3


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2SA1416S-TD-E
ON Semiconductor

1 : USD 0.513
10 : USD 0.3734
30 : USD 0.2977
100 : USD 0.2569
500 : USD 0.2388
1000 : USD 0.2283

6507 - WHS 4


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2SA1416S-TD-E
ON Semiconductor

1 : USD 0.401
10 : USD 0.3524
100 : USD 0.2741
500 : USD 0.2409
1000 : USD 0.2112
2000 : USD 0.191
10000 : USD 0.191
25000 : USD 0.1875
50000 : USD 0.1827

3680 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 36
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2SA1416S-TD-E
ON Semiconductor

36 : USD 0.2441
100 : USD 0.2428
250 : USD 0.2415
500 : USD 0.2367

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor 2SA1416 / 2SC3646 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)100V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C DC Current Gain h V =(--)5V, I =(--)100mA 100* 400* FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)100mA 120 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (13)8.5 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)400mA, I =(--)40mA (--0.2)0.1 (--0.6)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)400mA, I =(--)40mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)120 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)100 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-ON Time t (80)80 ns on Storage Time t See speci ed Test Circuit. (700)850 ns stg Fall Time t (40)50 ns f * : The 2SA1416 / 2SC3646 are classi ed by 100mA h as follows : FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 INPUT R B R L V R 50 + + 100F 470F --5V 50V I =10I =--10I =400mA C B1 B2 (For PNP, the polarity is reversed) Ordering Information Device Package Shipping memo 2SA1416S-TD-E PCP 1,000pcs./reel 2SA1416T-TD-E PCP 1,000pcs./reel Pb Free 2SC3646S-TD-E PCP 1,000pcs./reel 2SC3646T-TD-E PCP 1,000pcs./reel No.2005-2/7

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

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FAIRCHILD
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Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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