Ordering number : EN686K 2SD1060 Bipolar Transistor 2SD1060 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =40V, I =0A 0.1 mA CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 mA EBO EB C h1V =2V, I =1A 100* 280* FE CE C DC Current Gain h2V =2V, I =2A 80 FE CE C Gain-Bandwidth Product f V =5V, I =1A 30 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 100 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =3A, I =0.3A 0.3 V CE C B Collector-to-Base Breakdown Voltage V I =1mA, I =0A 60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =1mA, I =0A 6 V (BR)EBO E C Turn-On Time t 0.1 s on Storage Time t See speci ed Test Circuit 1.4 s stg Fall Time t 0.2 s f * : The 2SD1060 is classi ed by 1A h as follows FE Rank R S h 100 to 200 140 to 280 FE Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R = L 10 50 + + 100 F 470 F V = --5V V =20V BE CC I =10I = --10I =2A C B1 B2 I -- V I -- V C CE C BE 10 10 V =2V CE 9 8 8 7 6 6 5 4 4 3 2 2 1 I =0mA B 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, V -- V ITR08436 Base-to-Emitter Voltage, V -- V ITR08438 CE BE No.686-2/4 50mA 100mA 150mA 200mA 250mA 300mA 350mA 400mA 450mA 500mA Ta=80C 25C --20C Collector Current, I -- A C Collector Current, I -- A C