Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET 2SK3816 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 E 60 mJ AS Avalanche Current *2 I 40 A AV Note : *1 V =20V, L=50H, I =40A (Fig.1) DD AV *2 L50 H, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =20A 16 27 S DS D R (on)1 I =20A, V =10V 20 26 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =20A, V =4V 28 40 m DS D GS Input Capacitance Ciss 1780 pF Output Capacitance Coss V =20V, f=1MHz 266 pF DS Reverse Transfer Capacitance Crss 197 pF Turn-ON Delay Time t (on) 16.5 ns d Rise Time t 160 ns r See Fig.2 Turn-OFF Delay Time t (off) 160 ns d Fall Time t 160 ns f Total Gate Charge Qg 40 nC Gate to Source Charge Qgs V =30V, V =10V, I =40A 6.5 nC DS GS D Gate to Drain Miller Charge Qgd 11.5 nC Diode Forward Voltage V I =40A, V =0V 1.05 1.5 V SD S GS Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V =30V DD D L V IN 50 10V RG I =20A DUT D 0V G V IN R =1.5 L D V OUT 2SK3816 PW=10 s 10V S D.C.1% V 50 DD 0V G 2SK3816 P.G 50 S No.8054-2/7