Ordering number : ENA0556D 2SK4088LS N-Channel Power MOSFET 2SK4088LS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =10mA, V =0V 650 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =520V, V =0V 100 A DSS DS GS Gate to Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 35V GS DS D Forward Transfer Admittance yfs V =10V, I =5.5A 3.3 6.5 S DS D Static Drain to Source On-State Resistance R (on) I =5.5A, V =10V 0.65 0.85 DS D GS Input Capacitance Ciss 1000 pF Output Capacitance Coss V =30V, f=1MHz 172 pF DS Reverse Transfer Capacitance Crss 36 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 58 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 117 ns d Fall Time t 40 ns f Total Gate Charge Qg 37.6 nC Gate to Source Charge Qgs V =200V, V =10V, I =11A 6.8 nC DS GS D Gate to Drain Miller Charge Qgd 17.6 nC Diode Forward Voltage V I =11A, V =0V 0.9 1.2 V SD S GS Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V V =200V IN DD 10V 0V D L I =5.5A D V IN R =35.7 50 L RG G V OUT D PW=10 s D.C.1% S 2SK4088LS 10V G 50 V DD 0V S 2SK4088LS P.G 50 No. A0556-2/7