2SK4177-DL-1E ON Semiconductor

Ordering number : ENA0869A 2SK4177 N-Channel Power MOSFET 2SK4177 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 1500 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =1200V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.5 3.5 V GS DS D Forward Transfer Admittance yfs V =20V, I =1A 0.7 1.4 S DS D Static Drain-to-Source On-State Resistance R (on) I =1A, V =10V 10 13 DS D GS Input Capacitance Ciss 380 pF Output Capacitance Coss V =30V, f=1MHz 70 pF DS Reverse Transfer Capacitance Crss 40 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 37 ns r See Fig.2 Turn-OFF Delay Time t (off) 152 ns d Fall Time t 59 ns f Total Gate Charge Qg 37.5 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =2A 2.7 nC DS GS D Gate-to-Drain Miller Charge Qgd 20 nC Diode Forward Voltage V I =2A, V =0V 0.88 1.2 V SD S GS Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V V =200V DD IN 10V D L 0V I =1A 50 D V RG IN R =190 L G D V OUT PW10s 2SK4177 D.C.1% 10V S V 50 DD 0V G 2SK4177 P.G S 50 Ordering Information Device Package Shipping memo 2SK4177-DL-1E TO-263-2L 800pcs./reel Pb Free No. A0869-2/7