30A02MH-TL-E ON Semiconductor

30A02MH-TL-E electronic component of ON SemiconductorImages are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 30A02MH-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 30A02MH-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.30A02MH-TL-E
Manufacturer:ON Semiconductor
Category:Bipolar Transistors - BJT
Description:Bipolar Transistors - BJT BIP PNP 0.7A 30V
Datasheet:30A02MH-TL-E Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.6375 ea
Line Total: USD 0.64 
Availability : 2879
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 0.6375
10$ 0.3912
100$ 0.2388
500$ 0.1639
1000$ 0.1463
3000$ 0.1155
  

Availability2879
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6375
10$ 0.3912
100$ 0.2388
500$ 0.1639
1000$ 0.1463
3000$ 0.1155

   
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We are delighted to provide the 30A02MH-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 30A02MH-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : EN7359A 30A02MH Bipolar Transistor 30A02MH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --30V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 200 500 FE CE C Gain-Bandwidth Product f V = --10V, I = --50mA 520 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 4.7 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --200mA, I = --10mA --110 --220 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --200mA, I = --10mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --30 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 35 ns on Storage Time t See speci ed Test Circuit. 125 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L + + 50 220 F 470 F V =5V V = --12V BE CC I =20I = --20I = --300mA C B1 B2 Ordering Information Device Package Shipping memo 30A02MH-TL-E MCPH3 3,000pcs./reel Pb Free 30A02MH-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C BE --700 --800 V = --2V CE --700 --600 --600 --500 --500 --400 --400 --300 --300 --200 --200 --500 A --100 --100 I =0 B 0 0 0 --100 --200 --900 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --300 --400 --500 --600 --700 --800 --1000 Base-to-Emitter Voltage, V -- V Collector-to-Emitter Voltage, V -- mV IT05049 IT05050 BE CE No.7359-2/6 --1mA --2mA --3mA --5mA --7mA --10mA --15mA --20mA --25mA --30mA --40mA --50mA Ta=75C 25C --25C Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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