2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors aredesigned for generalpurpose switching and amplifier applications. Features 2N3055(NPN), MJ2955(PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase 1.52 R C/W JC ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS* CollectorEmitter Sustaining Voltage (Note 1) (I = 200 mAdc, I = 0) V 60 Vdc C B CEO(sus) CollectorEmitter Sustaining Voltage (Note 1) (I = 200 mAdc, R = 100 ) V 70 Vdc C BE CER(sus) Collector Cutoff Current (V = 30 Vdc, I = 0) I 0.7 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = 100 Vdc, V = 1.5 Vdc) 1.0 CE BE(off) (V = 100 Vdc, V = 1.5 Vdc, T = 150C) 5.0 CE BE(off) C Emitter Cutoff Current (V = 7.0 Vdc, I = 0) I 5.0 mAdc BE C EBO ON CHARACTERISTICS* (Note 1) DC Current Gain h FE (I = 4.0 Adc, V = 4.0 Vdc) C CE 20 70 (I = 10 Adc, V = 4.0 Vdc) C CE 5.0 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 Adc, I = 400 mAdc) C B 1.1 (I = 10 Adc, I = 3.3 Adc) C B 3.0 BaseEmitter On Voltage (I = 4.0 Adc, V = 4.0 Vdc) V 1.5 Vdc C CE BE(on) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I 2.87 Adc s/b (V = 40 Vdc, t = 1.0 s, Nonrepetitive) CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz) f 2.5 MHz C CE T *SmallSignal Current Gain (I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) h 15 120 C CE fe *SmallSignal Current Gain Cutoff Frequency (V = 4.0 Vdc, I = 1.0 Adc, f = 1.0 kHz) f 10 kHz CE C hfe *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 20 There are two limitations on the power handling ability of 50 s a transistor: average junction temperature and second 10 dc 1 ms breakdown. Safe operating area curves indicate I V C CE limits of the transistor that must be observed for reliable 6 operation i.e., the transistor must not be subjected to greater 4 dissipation than the curves indicate. 500 s 2 250 s The data of Figure 2 is based on T = 25C T is C J(pk) variable depending on power level. Second breakdown 1 pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. 0.6 BONDING WIRE LIMIT 0.4 THERMALLY LIMITED T = 25C (SINGLE PULSE) C SECOND BREAKDOWN LIMIT 0.2 6 10 20 40 60 V , COLLECTOREMITTER VOLTAGE (VOLTS) CE Figure 2. Active Region Safe Operating Area