Ordering number : EN6135C 5LP01M P-Channel Small Signal MOSFET 5LP01M Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I = --1mA, V =0V --50 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V = --50V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V = --10V, I = --100 A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V = --10V, I = --40mA 70 100 mS DS D R (on)1 I = --40mA, V = --4V 18 23 DS D GS Static Drain to Source On-State Resistance R (on)2 I = --20mA, V = --2.5V 20 28 DS D GS R (on)3 I = --5mA, V = --1.5V 30 60 DS D GS Input Capacitance Ciss 7.4 pF Output Capacitance Coss V = --10V, f=1MHz 4.2 pF DS Reverse Transfer Capacitance Crss 1.3 pF Turn-ON Delay Time t (on) 20 ns d Rise Time t 35 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 160 ns d Fall Time t 150 ns f Total Gate Charge Qg 1.40 nC Gate to Source Charge Qgs V = --10V, V = --10V, I = --70mA 0.16 nC DS GS D Gate to Drain Miller Charge Qgd 0.23 nC Diode Forward Voltage V I = --70mA, V =0V --0.85 --1.2 V SD S GS Switching Time Test Circuit V = --25V DD V IN 0V --4V I = --40mA D V R =625 IN L PW=10 s D V OUT D.C.1% G 5LP01M P.G 50 S No.6135-2/6